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1 CGH27030S 30 w, dc - 6.0 ghz, 28 v, gan hemt crees CGH27030S is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for lte, 4g telecom and bwa amplifer applications. the CGH27030S operates from a 28 volt rail. the transistor is available in a 3mm x 4mm, surface mount, dual-fat-no-lead (dfn) package. package type: 3x4 dfn pn: CGH27030S re v 2.1 C de ce mbe r 2015 typical performance 1.8 - 2.2 ghz (t c = 25?c) , 28 v parameter 1.8 ghz 2.0 ghz 2.2 ghz units small signal gain 20.0 20.4 19.5 db adjacent channel power @ p out =5 w -39.5 -42.1 -39.1 dbc drain effciency @ p out = 5 w 31.8 32.8 33.8 % input return loss -4.2 -6.4 -7.7 db note: measured in the CGH27030S-amp1 application circuit. under 7.5 db par single carrier wcdma signal test model 1 with 64 dpch. typical performance 2.3 - 2.7 ghz (t c = 25?c) , 28 v parameter 2.3 ghz 2.5 ghz 2.7 ghz units small signal gain 21.1 20.6 20.0 db adjacent channel power @ p out =3.2 w -32.0 -36.4 -33.6 dbc drain effciency @ p out = 3.2 w 37.8 36.2 35.0 % input return loss -7.3 -7.9 -7.2 db note: measured in the CGH27030S-amp2 application circuit. under 7.5 db par single carrier wcdma signal test model 1 with 64 dpch. features for 28 v in CGH27030S-amp1 ? 1.8 - 2.2 ghz operation ? 30 w typical output power ? 18 db gain at 5 w p ave ? -39 dbc aclr at 5 w p ave ? 33% effciency at 5 w p ave ? high degree of apd and dpd correction can be applied features for 28 v in CGH27030S-amp2 ? 2.3 - 2.7 ghz operation ? 30 w typical output power ? 18.5 db gain at 5 w p ave ? -39 dbc aclr at 5 w p ave ? 36% effciency at 5 w p ave ? high degree of apd and dpd correction can be applied subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units notes drain-source voltage v dss 84 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 7.2 ma 25?c maximum drain current 1 i dmax 3.0 a 25?c soldering temperature 2 t s 245 ?c case operating temperature 3 t c -40, +150 ?c thermal resistance, junction to case 4,5 r jc 3.43 ?c/w 85?c note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 t c = case temperature for the device. it refers to the temperature at the ground tab underneath the package. the pcb will add additional thermal resistance. see also, the power dissipation de-rating curve on page 12. 4 measured for the CGH27030S at p diss = 21.6 w 5 the r th for crees demonstration amplifer, CGH27030S-amp1, with 33 x 0.011 via holes designed on a 20 mil thick rogers 4350 pcb, is 3.29c. the total r th from the heat sink to the junction is 3.43c + 3.29c = 6.72c/w. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 7.2 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 28 v, i d = 0.20 ma saturated drain current i ds 5.8 7.0 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v (br)dss 84 C C v dc v gs = -8 v, i d = 7.2 ma rf characteristics 2,3 (t c = 25 ? c, f 0 = 2.2 ghz unless otherwise noted) gain g C 18.3 - db v dd = 28 v, i dq = 0.20 a, p out = 37 dbm wcdma linerarity 4 aclr C -39 C dbc v dd = 28 v, i dq = 0.20 a, p out = 37 dbm drain effciency 4 C 33.7 - % v dd = 28 v, i dq = 0.20 a, p out = 37 dbm output mismatch stress vswr - 10 : 1 - y no damage at all phase angles, v dd = 28 v, i dq = 0.20 a, p out = 37 dbm dynamic characteristics input capacitance 5 c gs C 8.6 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance 5 c ds C 2.0 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.4 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging 2 scaled from pcm data 3 measured in crees production test fxture. this fxture is designed for high volume test at 2.7 ghz 4 single carrier wcdma, 3gpp test model 1, 64 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf 5 includes package and internal matching components CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance in CGH27030S-amp1 figure 1. - small signal gain and return losses vs frequency v dd = 28 v, i dq = 0.20 a figure 2. - typical drain effciency and aclr vs. output power v dd = 28 v, i dq = 0.20 a, 1c wcdma, par = 7.5 db 20 25 30 35 40 -30 -25 -20 -15 -10 effi c i e n c y (% ) a c l r (d b c ) typical drain efficiency and aclr vs. output power of CGH27030S measured in CGH27030S-tb1 vdd=28 v,idq=0.20 a, 1c wcdm, par=7.5 db 1p8aclr 2p0aclr 2p2aclr 1p8eff 2p0eff 2p2eff 0 5 10 15 -50 -45 -40 -35 19 21 23 25 27 29 31 33 35 37 39 effi c i e n c y (% ) a c l r (d b c ) pout (dbm) aclr effciency 5 10 15 20 25 g a i n (d b ) i n p u t a n d o u tp u t r e tu r n l o s s small signal gain and return losses vs. frequency for CGH27030S measured in application circuit cghv27030s-tb1 vdd=28 v, idq=0.20 a s11 s21 s22 -15 -10 -5 0 1700 1800 1900 2000 2100 2200 2300 i n p u t a n d o u tp u t r e tu r n l o s s frequency (mhz) CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance in CGH27030S-amp1 figure 3. - typical gain, drain effciency and aclr vs frequency v dd = 28 v, i dq = 0.20 a, p ave = 5 w, 1c wcdma, par = 7.5 db gain drain effciency aclr gain aclr drain effciency CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 source and load impedances for application circuit CGH27030S-amp1 frequency (mhz) z source z load 1800 3.2 - j1.6 11 + j0.2 2000 3.6 - j0.6 10.5 + j1.8 2200 3.3 - j0.1 11 + j3.3 note 1 : v dd = 28 v, i dq = 0.20 a in the dfn package. note 2 : impedances are extracted from the CGH27030S-amp1 application circuit and are not source and load pull data derived from the transistor. CGH27030S-amp1 application circuit bill of materials designator description qty r1 res, 1/16 w, 0603, 1%, 100 ohms 1 r2 res, 1/16 w, 0603, 1%, 5.1 ohms 1 c1 cap, 6.8 pf, 0.25 pf, 0603, atc 1 c2 cap, 2.4 pf, 0.01 pf, 0603, atc 1 c3, c8, c9, c10 cap, 10.0 pf, 0.5 pf, 0603, atc 3 c12 cap, 100.0 pf, 5%, 0603, atc 1 c5 cap, 470 pf, 5%, 100 v, 0603 1 c6, c13 cap, 33000 pf, 0805, 10%, 100 v, x7r 2 c14 cap, 1.0 uf, 100 v, 10%, x7r, 1210 1 c7 cap, 10 uf, 16 v, tantalum 1 c15 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange, 4-hole, blunt post 2 q1 CGH27030S, qfn 1 d z source z load g s CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 CGH27030S-amp1 application circuit, 28 v, 1.8-2.2 ghz CGH27030S-amp1 application circuit schematic, 28 v, 1.8-2.2 ghz CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 CGH27030S-amp1 application circuit, 28 v, 1.8-2.2 ghz CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 typical performance in application circuit CGH27030S-amp2 figure 4. - small signal gain and return losses vs frequency v dd = 28 v, i dq = 0.20 a figure 5. - typical drain effciency and aclr vs. output power v dd = 28 v, i dq = 0.20 a, 1c wcdma, par = 7.5 db 0 5 10 15 20 25 g a i n (d b ) i n p u t a n d o u tp u t r e tu r n l o s s small signal gain and return losses vs. frequency for CGH27030S measured in application circuit CGH27030S-tb2 vdd=28 v, idq=0.20 a -25 -20 -15 -10 -5 2200 2300 2400 2500 2600 2700 2800 i n p u t a n d o u tp u t r e tu r n l o s s frequency (mhz) s11 s21 s22 25 30 35 40 45 -20 -15 -10 -5 0 ef f i ci en cy ( % ) a c l r ( d b c ) typical drain efficiency and aclr vs. output power of CGH27030S measured in cghv27030s-tb2 vdd=28 v,idq=0.20 a, 1c wcdm, par=7.5 db aclr2p3 aclr2p5 aclr2p7 eff2p3 eff2p5 eff2p7 0 5 10 15 20 -45 -40 -35 -30 -25 19 21 23 25 27 29 31 33 35 37 39 ef f i ci en cy ( % ) a c l r ( d b c ) pout (dbm) effciency aclr CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 typical performance in application circuit CGH27030S-amp2 figure 6. - typical gain, drain effciency and aclr vs frequency v dd = 28 v, i dq = 0.20 a, p ave = 5 w, 1c wcdma, par = 7.5 db electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm 2 (125 v to 250 v) jedec jesd22 c101-c moisture sensitivity level (msl) classifcation parameter symbol level test methodology moisture sensitivity level msl 3 (168 hours) ipc/jedec j-std-20 drain effciency gain drain effciency gain aclr effciency CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 source and load impedances for application circuit CGH27030S-amp2 frequency (mhz) z source z load 2300 1.7 - j0.5 7.7 + j7.7 2500 2.2 - j0.2 8.0 + j6.8 2700 1.5 - j0.1 6.6 + j6.3 note 1 : v dd = 28 v, i dq = 0.20 a in the dfn package. note 2 : impedances are extracted from the CGH27030S-amp2 application circuit and are not source and load pull data derived from the transistor. CGH27030S-amp2 application circuit bill of materials designator description qty r1, r2 res, 22.6, ohm, +/-1%, 1/16w, 0603 2 c1 cap, 3.3 pf, 0.1 pf, 0603, atc 1 c2 cap, 0.9 pf, 0.1 pf, 0603, atc 1 c3 cap, 1.2 pf, 0.1 pf, 0603, atc 1 c4 cap, 1.5 pf, 0.1 pf, 0603, atc 1 c5, c9 cap, 8.2 pf, 0.25 pf, 0603, atc 2 c6, c10 cap, 470 pf, 5%, 100 v, 0603, x 2 c7, c11 cap, 33000 pf, 0805, 100 v, x7r 2 c12 cap, 1.0 uf, 100 v, 10%, x7r, 1210 1 c8 cap, 10 uf 16 v tantalum 1 c14 cap, 27 pf, 5%, 0603, atc 1 c13 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange, 4-hole, blunt post 1 q1 CGH27030S, qfn 2 d z source z load g s CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 CGH27030S-amp2 application circuit , 28 v, 2.3-2.7 ghz CGH27030S-amp2 application circuit schematic, 28 v, 2.3-2.7 ghz CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 CGH27030S-amp2 application circuit, 28 v, 2.3-2.7 ghz CGH27030S power dissipation de-rating curve figure 7. - CGH27030S power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2) 10 15 20 25 po w er d i ssi p ati o n ( w ) CGH27030S power dissipation de-rating curve pdiss 0 5 10 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum temperature ( c) pdiss note 1 CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
13 product dimensions CGH27030S (package 3 x 4 dfn) pin input/output 1 gnd 2 rf in 3 rf in 4 rf in 5 rf in 6 gnd 7 gnd 8 rf out 9 rf out 10 rf out 11 rf out 12 gnd note: leadframe fnish for 3x4 dfn package is nickel/palladium/gold. gold is the outer layer. CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
14 part number system parameter value units upper frequency 1 2.7 ghz power output 30 w package surface mount - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) cree gan hemt CGH27030S CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
15 product ordering information order number description unit of measure image CGH27030S gan hemt each CGH27030S-amp1 test board without gan hemt each CGH27030S-amp2 test board with gan hemt installed each CGH27030S-tr delivered in tape and reel 250 parts / reel CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
16 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.313.5639 CGH27030S rev 2.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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